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GSI Technology SRAM Product Families
Low Latency DRAMs
quad
ddr
sync
 
 
 
 
GS8320(E)18/32/36


Part No.
Org.
Operating
Mode
VDD and
I/O
Voltage
FT Access
Time
(ns)
PL
Frequency

(MHz)
Pkg.
Status

Datasheet

Models*
Verilog
BSDL
VHDL
IBIS
1M x 36
PL/FT
2.5/3.3 V
6.5, 7, 7.5, 8, 8.5, 8.5
250, 225, 200, 166, 150, 133
GT

Prod

n/a
1M x 32
PL/FT
2.5/3.3 V
6.5, 7, 7.5, 8, 8.5, 8.5
250, 225, 200, 166, 150, 133
GT
Prod
n/a
2M x 18
PL/FT
2.5/3.3 V
6.5, 7, 7.5, 8, 8.5, 8.5
250, 225, 200, 166, 150, 133
GT
Prod
n/a
1M x 36
PL/FT
2.5/3.3 V
6.5, 7, 7.5, 8, 8.5, 8.5
250, 225, 200, 166, 150, 133
GT
Prod
n/a
1M x 32
PL/FT
2.5/3.3 V
6.5, 7, 7.5, 8, 8.5, 8.5
250, 225, 200, 166, 150, 133
GT
Prod
n/a
2M x 18
PL/FT
2.5/3.3 V
6.5, 7, 7.5, 8, 8.5, 8.5
250, 225, 200, 166, 150, 133
GT
Prod
n/a

 

*Notes:
Spice models may be requested from our Applications Engineering Department here.
Denali models can be found here.
Synopsys models can be found here.


Features
. FT pin for user-configurable flow through or pipeline operation
. Single Cycle Deselect operation (GS832018/32/36)
. Dual Cycle Deselect operation (GS8320E18/32/36)
. ZQ mode pin for user-selectable high/low output drive
. 2.5 V or 3.3 V +10%/-10% core power supply
. 2.5 V or 3.3 V I/O supply
. LBO pin for Linear or Interleaved Burst mode
. Internal input resistors on mode pins allow floating mode pins
. Byte Write (BW) and/or Global Write (GW) operation
. Internal self-timed write cycle
. Automatic power-down for portable applications
. JEDEC-standard package; available in RoHS-compliant package

 

 

 

 

 
 
 
 
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